Epitaxia growth of a low-density framework form of crystalline silicon: A molecular-dynamics study

S. Munetoh, K. Moriguchi, K. Kamei, A. Shintani, T. Motooka

研究成果: ジャーナルへの寄稿記事

29 引用 (Scopus)

抄録

A route for preparing pristine Si clathrates with epitaxial growth techniques was theoretically studied using molecular-dynamics (MD) simulations. results suggest that new wide-gap Si semiconductors with clathrate structures can be prepared using epitaxial growth techniques.

元の言語英語
ページ(範囲)4879-4882
ページ数4
ジャーナルPhysical Review Letters
86
発行部数21
DOI
出版物ステータス出版済み - 5 21 2001
外部発表Yes

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clathrates
molecular dynamics
silicon
routes
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Epitaxia growth of a low-density framework form of crystalline silicon : A molecular-dynamics study. / Munetoh, S.; Moriguchi, K.; Kamei, K.; Shintani, A.; Motooka, T.

:: Physical Review Letters, 巻 86, 番号 21, 21.05.2001, p. 4879-4882.

研究成果: ジャーナルへの寄稿記事

Munetoh, S. ; Moriguchi, K. ; Kamei, K. ; Shintani, A. ; Motooka, T. / Epitaxia growth of a low-density framework form of crystalline silicon : A molecular-dynamics study. :: Physical Review Letters. 2001 ; 巻 86, 番号 21. pp. 4879-4882.
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