Epitaxial chemical vapour deposition growth of monolayer hexagonal boron nitride on a Cu(111)/sapphire substrate

Yuki Uchida, Tasuku Iwaizako, Seigi Mizuno, Masaharu Tsuji, Hiroki Ago

研究成果: Contribution to journalArticle査読

20 被引用数 (Scopus)

抄録

Hexagonal boron nitride (h-BN), an atomically thin insulating material, shows a large band gap, mechanical flexibility, and optical transparency. It can be stacked with other two-dimensional (2D) materials through van der Waals interactions to form layered heterostructures. These properties promise its application as an insulating layer of novel 2D electronic devices due to its atomically smooth surface with a large band gap. Herein, we demonstrated the ambient-pressure chemical vapour deposition (CVD) growth of high-quality, large-area monolayer h-BN on a Cu(111) thin film deposited on a c-plane sapphire using ammonia borane (BH3NH3) as the feedstock. Highly oriented triangular h-BN grains grow on Cu(111), which finally coalescence to cover the entire Cu surface. Low-energy electron diffraction (LEED) measurements indicated that the hexagonal lattice of the monolayer h-BN is well-oriented along the underlying Cu(111) lattice, thus implying the epitaxial growth of h-BN, which can be applied in various 2D electronic devices.

本文言語英語
ページ(範囲)8230-8235
ページ数6
ジャーナルPhysical Chemistry Chemical Physics
19
12
DOI
出版ステータス出版済み - 2017

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)
  • 物理化学および理論化学

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