Epitaxial growth of (010)-oriented β-FeSi2 film on Si(110) substrate

Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura

研究成果: Contribution to journalConference article査読

1 被引用数 (Scopus)

抄録

High-quality (010)-oriented epitaxial β-FeSi2 films were grown on Si(110) substrates by coating silver thin layer. The full width at half maximum of the rocking curve of β-FeSi2 040 was 0.14o for the film deposited at 800°C on Si(110) substrates with 95 nm-thick silver layer. Moreover, this epitaxial β-FeSi2 film was constructed with single domain structure, and the lattice parameter of a-axis was extended by 0.7%. The photoluminescence spectrum from this epitaxial β-FeSi2 indicated that the band-gap was modulated by lattice strain of a-axis.

本文言語英語
ページ(範囲)189-194
ページ数6
ジャーナルMaterials Research Society Symposium Proceedings
1493
DOI
出版ステータス出版済み - 2013
イベント2012 MRS Fall Meeting - Boston, MA, 米国
継続期間: 11 25 201211 30 2012

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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