Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy

L. B. Rowland, R. S. Kern, S. Tanaka, Robert F. Davis

研究成果: ジャーナルへの寄稿記事

44 引用 (Scopus)

抄録

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)-SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented A1N(0001) films.

元の言語英語
ページ(範囲)2310-2314
ページ数5
ジャーナルJournal of Materials Research
8
発行部数9
DOI
出版物ステータス出版済み - 10 1993
外部発表Yes

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Gas source molecular beam epitaxy
Plasma Gases
Epitaxial growth
molecular beam epitaxy
Plasmas
Electron cyclotron resonance
Plasma sources
electron cyclotron resonance
gases
Nitrogen
wafers
nitrogen
Defects
defects
cells
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy. / Rowland, L. B.; Kern, R. S.; Tanaka, S.; Davis, Robert F.

:: Journal of Materials Research, 巻 8, 番号 9, 10.1993, p. 2310-2314.

研究成果: ジャーナルへの寄稿記事

Rowland, L. B. ; Kern, R. S. ; Tanaka, S. ; Davis, Robert F. / Epitaxial growth of AIN by plasma-assisted, gas-source molecular beam epitaxy. :: Journal of Materials Research. 1993 ; 巻 8, 番号 9. pp. 2310-2314.
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