The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.
|ジャーナル||Electrochemical Society Extended Abstracts|
|出版ステータス||出版済み - 1月 1 1985|
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