EPITAXIAL GROWTH OF ALKALINE EARTH FLUORIDE FILMS ON Si SUBSTRATES.

Hiroshi Ishiwara, Tanemasa Asano

研究成果: Contribution to journalConference article

抜粋

The authors review the growth conditions, properties, and applications of epitaxial alkaline earth fluoride films on Si substrates. The lattice mismatches of CaF//2, SrF//2, and BaF//2 to Si are about 0. 6%, 6. 8%, and 14. 2% at room temperature, respectively. The films are grown by molecular beam epitaxy or vacuum-deposition onto heated substrates, in which molecular beams of the fluorides are formed by evaporating polycrystalline fluoride grains.

元の言語英語
ページ数1
ジャーナルElectrochemical Society Extended Abstracts
85-1
出版物ステータス出版済み - 1 1 1985

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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