Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

    研究成果: Contribution to journalArticle査読

    1 被引用数 (Scopus)

    抄録

    (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

    本文言語英語
    論文番号035319
    ジャーナルAIP Advances
    11
    3
    DOI
    出版ステータス出版済み - 3 1 2021

    All Science Journal Classification (ASJC) codes

    • 物理学および天文学(全般)

    フィンガープリント

    「Epitaxial growth of (Al<sub>x </sub>Ga<sub>1- x </sub>)<sub>2</sub>O<sub>3</sub>thin films on sapphire substrates by plasma assisted pulsed laser deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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