Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen; Makoto Arita; Katsuhiko Saito; Tooru Tanaka; Qixin Guo

doi:10.1063/5.0046237

Epitaxial growth of (Al_xGa_{1- x})₂O₃thin films on sapphire substrates by plasma assisted pulsed laser deposition

Zewei Chen, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

8 被引用数 (Scopus)

抄録

(AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

本文言語	英語
論文番号	035319
ジャーナル	AIP Advances
巻	11
号	3
DOI	https://doi.org/10.1063/5.0046237
出版ステータス	出版済み - 3月 1 2021

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

文献へのアクセス

10.1063/5.0046237

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引用スタイル

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title = "Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition",

abstract = "(AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.",

author = "Zewei Chen and Makoto Arita and Katsuhiko Saito and Tooru Tanaka and Qixin Guo",

note = "Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science, and Technology, Japan. We thank the Japan Society for Promotion of Science (JSPS) for providing grants (KAKENHI Grant No. 19K04492). Publisher Copyright: {\textcopyright} 2021 Author(s).",

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doi = "10.1063/5.0046237",

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T1 - Epitaxial growth of (Alx Ga1- x )2O3thin films on sapphire substrates by plasma assisted pulsed laser deposition

AU - Chen, Zewei

AU - Arita, Makoto

AU - Saito, Katsuhiko

AU - Tanaka, Tooru

AU - Guo, Qixin

N1 - Funding Information: This work was partially supported by the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science, and Technology, Japan. We thank the Japan Society for Promotion of Science (JSPS) for providing grants (KAKENHI Grant No. 19K04492). Publisher Copyright: © 2021 Author(s).

PY - 2021/3/1

Y1 - 2021/3/1

N2 - (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

AB - (AlxGa1-x)2O3 was grown on a-plane sapphire substrates at 500 °C by plasma assisted pulsed laser deposition (PLD) in the whole Al concentration range. The films were characterized using x-ray photoelectron spectroscopy (XPS), x-ray diffraction, atomic force microscopy, and spectrophotometry. By using XPS to measure the bandgap of the films, it was found that as the Al concentration x changes from 0.00 to 1.00, the bandgap ranges from 5.3 to 8.5 eV. The results show that plasma assisted PLD is a promising method to grow ultra-wide bandgap (AlxGa1-x)2O3 at low temperatures, which paves the way for the application of power devices and other functional devices based on (AlxGa1-x)2O3.

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