EPITAXIAL GROWTH OF ELEMENTAL SEMICONDUCTOR FILMS ONTO SILICIDE/Si AND FLUORIDE/Si STRUCTURES.

H. Ishiwara, T. Asano, S. Furukawa

研究成果: Contribution to journalConference article査読

20 被引用数 (Scopus)

抄録

Epitaxial growth of Si and Ge films onto silicide/Si and fluoride/Si structures has been reviewed. Growth conditions of epitaxial silicide films such as Pd//2Si, CoSi//2, and NiSi//2 films on Si substrates, as well as heteroepitaxial Si/CoSi//2/Si structures, are presented. Crystalline quality and structural properties of the films have been analyzed by Rutherford backscattering and channeling spectroscopy, transmission electron microscopy, optical microscopy, and x-ray diffraction analysis. Growth conditions of fluoride films such as CaF//2, SrF//2, and BaF//2 films on Si substrates are also presented.

本文言語英語
ページ(範囲)266-271
ページ数6
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
1
2
DOI
出版ステータス出版済み - 1 1 1982
外部発表はい
イベントProc of the Int Conf on Metastable and Modulated Semicond Struct - Pasadena, CA, USA
継続期間: 12 6 198212 10 1982

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 電子工学および電気工学

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