Epitaxial growth of ge films onto caf 2/si structures

Tanemasa Asano, Hiroshi Ishiwara

研究成果: ジャーナルへの寄稿記事

19 引用 (Scopus)

抄録

Heteroepitaxial Ge(insulator/Si structures have been prepared by vacuum evaporation of CaF2and Ge onto heated (111) and (100) oriented Si substrates. CaF2films with high crystalline perfection and smooth surface were formed on (111) and (lOO)Si at substrate temperatures of 800°C and 600°C, respectively. Ge films were deposited onto the CaF2/Si structures at 400°C to 600°C. Higher Ge deposition temperature resulted in increased Ge surface roughness but improved Ge crystalline quality. Both the crystalline quality and the electrical properties of the Ge films on CaF2/Si(100) structures were superior to those of the Ge films on CaF2/Si(111) structures.

元の言語英語
ページ(範囲)L630-L632
ジャーナルJapanese Journal of Applied Physics
21
発行部数10
DOI
出版物ステータス出版済み - 10 1982

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Epitaxial growth
Crystalline materials
Vacuum evaporation
Substrates
surface roughness
Electric properties
Surface roughness
electrical properties
insulators
evaporation
Temperature
vacuum
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Epitaxial growth of ge films onto caf 2/si structures. / Asano, Tanemasa; Ishiwara, Hiroshi.

:: Japanese Journal of Applied Physics, 巻 21, 番号 10, 10.1982, p. L630-L632.

研究成果: ジャーナルへの寄稿記事

Asano, Tanemasa ; Ishiwara, Hiroshi. / Epitaxial growth of ge films onto caf 2/si structures. :: Japanese Journal of Applied Physics. 1982 ; 巻 21, 番号 10. pp. L630-L632.
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