Epitaxial growth of ge films onto caf 2/si structures

Tanemasa Asano, Hiroshi Ishiwara

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

Heteroepitaxial Ge(insulator/Si structures have been prepared by vacuum evaporation of CaF2and Ge onto heated (111) and (100) oriented Si substrates. CaF2films with high crystalline perfection and smooth surface were formed on (111) and (lOO)Si at substrate temperatures of 800°C and 600°C, respectively. Ge films were deposited onto the CaF2/Si structures at 400°C to 600°C. Higher Ge deposition temperature resulted in increased Ge surface roughness but improved Ge crystalline quality. Both the crystalline quality and the electrical properties of the Ge films on CaF2/Si(100) structures were superior to those of the Ge films on CaF2/Si(111) structures.

本文言語英語
ページ(範囲)L630-L632
ジャーナルJapanese journal of applied physics
21
10
DOI
出版ステータス出版済み - 10 1982
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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