Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates

S. Leone, A. Henry, E. Janzén, Shinichi Nishizawa

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

This study focuses on the epitaxial growth of silicon carbide (SiC) epitaxial layers, adopting the chloride-based chemical-vapor-deposition (CVD) process, which allows to achieve ten times higher growth rate compared to the standard process based on the mixture of a silicon-containing gas and a hydrocarbon. In order to improve the material quality, substrates with different off-angles were used, since low off-angle substrates result in a reduction of killer defects for specific devices. Different growth mechanisms dominate for different substrate off-cut and an accurate set up of dedicated surface preparation procedures and tuning of growth parameters are needed. This study demonstrates that silicon-rich gas inputs are favorable for lower off-angle (nominally on-axis) substrates, while carbon-rich are beneficial for higher off-angles (usually 8° off-axis for 4H-SiC). Methyltrichlorosilane (MTS) is shown to be the best precursor to achieve the presented results.

本文言語英語
ページ(範囲)170-173
ページ数4
ジャーナルJournal of Crystal Growth
362
1
DOI
出版ステータス出版済み - 1 1 2013
外部発表はい

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

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