Epitaxial growth of Zn1−xMg xO films on sapphire substrates via inverted Stranski-Krastanov mode using magnetron sputtering

研究成果: ジャーナルへの寄稿学術誌査読

抄録

We have succeeded in epitaxial growth of high-quality Zn1−xMgxO films of x = 0.04–0.33 on 18%-lattice mismatched sapphire substrates using magnetron sputtering. The films have grown in inverted Stranski-Krastanov (inverted SK) mode, where a buffer layer consisting of three-dimensional islands initially forms and a relaxed two-dimensional layer subsequently grows on the buffer layer. The resultant films have flat surfaces with root-mean-square roughness of 0.43–0.75 nm and are of high-crystal qualities even for large Mg contents; the full widths at half maximum of (0002) x-ray rocking curves are 0.05° (x = 0.33) and 0.07° (x = 0.14). Furthermore, we observed that the optical absorption edge shifts continuously toward the shorter wavelength with increasing x, and the band gap has been tuned from 3.5 to 4.3 eV. These results show that the inverted SK mode is useful for fabricating high-quality Zn1−xMgxO films with wide-range tunability of band gaps. Graphical abstract: [Figure not available: see fulltext.]

本文言語英語
ページ(範囲)415-419
ページ数5
ジャーナルMRS Advances
7
20
DOI
出版ステータス出版済み - 5月 2022

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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