Epitaxial relations in group-IIa fluoride/Si(111) heterostructures

Tanemasa Asano, Hiroshi Ishiwara

研究成果: Contribution to journalArticle査読

65 被引用数 (Scopus)

抄録

CaF2, SrF2, BaF2, and mixed (Ca,Sr)F 2 films have been grown epitaxially on Si (111) substrates by vacuum evaporation. The epitaxial relation between these fluoride films and the substrates has been investigated by ion channeling analysis. Both the CaF 2 and SrF2 films prefer to have orientations rotated 180°about the normal to the substrate surface. In contrast, the vast majority of (Ca,Sr)F2 films have orientations identical to those of the substrate, and the BaF2 film is composed of a mixture of the two. Analysis was also made on a Si/CaF2/Si(111) double heterostructure, which showed that the top Si film is again rotated 180°about the normal to the underlying CaF2 surface.

本文言語英語
ページ(範囲)517-519
ページ数3
ジャーナルApplied Physics Letters
42
6
DOI
出版ステータス出版済み - 12 1 1983
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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