Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates

Hiroshi Ishiwara, Kazuo Tsutsui, Tanemasa Asano, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

抄録

Epitaxial relations in lattice matched Ca0.42Sr0 58F2 films grown on GaAs(111), (111) and Ge(111) substrates were investigated by 2-MeV4He+ ion channeling and backscattering measurements. It was found that the epitaxial films on GaAs have an orientation indentical to that of substrates (type A), whereas those on Ge mainly exhibit an orientation rotated by 180° about the surface normal (111) axis (type B), though both substrates have nearly the same lattice constant.

元の言語英語
ページ(範囲)L803-L805
ジャーナルJapanese Journal of Applied Physics
23
発行部数10
DOI
出版物ステータス出版済み - 10 1984

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Substrates
Epitaxial films
Backscattering
Crystal orientation
Lattice constants
backscattering
Ions
ions

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates. / Ishiwara, Hiroshi; Tsutsui, Kazuo; Asano, Tanemasa; Furukawa, Seijiro.

:: Japanese Journal of Applied Physics, 巻 23, 番号 10, 10.1984, p. L803-L805.

研究成果: ジャーナルへの寄稿記事

Ishiwara, Hiroshi ; Tsutsui, Kazuo ; Asano, Tanemasa ; Furukawa, Seijiro. / Epitaxial relations in lattice-matched (ca, sr)f2 films grown on gaas{111} and ge(111) substrates. :: Japanese Journal of Applied Physics. 1984 ; 巻 23, 番号 10. pp. L803-L805.
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