EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.

T. Asano, H. Ishiwara

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

元の言語英語
ホスト出版物のタイトルMaterials Research Society Symposia Proceedings
出版者North-Holland Publ Co
ページ145-115
ページ数31
ISBN(印刷物)0444007741
出版物ステータス出版済み - 12 1 1982

出版物シリーズ

名前Materials Research Society Symposia Proceedings
10
ISSN(印刷物)0272-9172

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Asano, T., & Ishiwara, H. (1982). EPITAXIAL Si/INSULATOR/Si STRUCTURE PREPARED BY VACUUM DEPOSITION OF CaF//2 AND SILICON.Materials Research Society Symposia Proceedings (pp. 145-115). (Materials Research Society Symposia Proceedings; 巻数 10). North-Holland Publ Co.