Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Satoru Tanaka, Kan Nakatsuji, Fumio Komori, Hiroshi Tochihara

研究成果: Contribution to journalArticle査読

42 被引用数 (Scopus)

抄録

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.

本文言語英語
論文番号136105
ジャーナルPhysical review letters
98
13
DOI
出版ステータス出版済み - 3 30 2007

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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