Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

Tetsuroh Shirasawa, Kenjiro Hayashi, Seigi Mizuno, Tanaka Satoru, Kan Nakatsuji, Fumio Komori, Hiroshi Tochihara

研究成果: ジャーナルへの寄稿記事

39 引用 (Scopus)

抄録

Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.

元の言語英語
記事番号136105
ジャーナルPhysical Review Letters
98
発行部数13
DOI
出版物ステータス出版済み - 3 30 2007

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oxynitrides
silicon
silicon nitrides
silicates
electron diffraction
etching
nitrogen
atmospheres
annealing
scanning
air
hydrogen
cells
gases
spectroscopy
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface. / Shirasawa, Tetsuroh; Hayashi, Kenjiro; Mizuno, Seigi; Satoru, Tanaka; Nakatsuji, Kan; Komori, Fumio; Tochihara, Hiroshi.

:: Physical Review Letters, 巻 98, 番号 13, 136105, 30.03.2007.

研究成果: ジャーナルへの寄稿記事

Shirasawa, T, Hayashi, K, Mizuno, S, Satoru, T, Nakatsuji, K, Komori, F & Tochihara, H 2007, 'Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface', Physical Review Letters, 巻. 98, 番号 13, 136105. https://doi.org/10.1103/PhysRevLett.98.136105
Shirasawa, Tetsuroh ; Hayashi, Kenjiro ; Mizuno, Seigi ; Satoru, Tanaka ; Nakatsuji, Kan ; Komori, Fumio ; Tochihara, Hiroshi. / Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface. :: Physical Review Letters. 2007 ; 巻 98, 番号 13.
@article{89d4349b2be14110a4f38aef372e98fa,
title = "Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface",
abstract = "Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.",
author = "Tetsuroh Shirasawa and Kenjiro Hayashi and Seigi Mizuno and Tanaka Satoru and Kan Nakatsuji and Fumio Komori and Hiroshi Tochihara",
year = "2007",
month = "3",
day = "30",
doi = "10.1103/PhysRevLett.98.136105",
language = "English",
volume = "98",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "13",

}

TY - JOUR

T1 - Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface

AU - Shirasawa, Tetsuroh

AU - Hayashi, Kenjiro

AU - Mizuno, Seigi

AU - Satoru, Tanaka

AU - Nakatsuji, Kan

AU - Komori, Fumio

AU - Tochihara, Hiroshi

PY - 2007/3/30

Y1 - 2007/3/30

N2 - Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.

AB - Hydrogen-gas etching of a 6H-SiC(0001) surface and subsequent annealing in nitrogen atmosphere leads to the formation of a silicon oxynitride (SiON) epitaxial layer. A quantitative low-energy electron diffraction analysis revealed that the SiON layer has a hetero-double-layer structure: a silicate monolayer on a silicon nitride monolayer via Si-O-Si bridge bonds. There are no dangling bonds in the unit cell, which explains the fact that the structure is robust against air exposure. Scanning tunneling spectroscopy measured on the SiON layer shows a bulk SiO2-like band gap of ∼9eV. Great potential of this new epitaxial layer for device applications is described.

UR - http://www.scopus.com/inward/record.url?scp=34047113251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047113251&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.98.136105

DO - 10.1103/PhysRevLett.98.136105

M3 - Article

VL - 98

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 13

M1 - 136105

ER -