Epitaxial Yttria-stabilized Zirconia (YSZ) film deposited on Si(100) substrate by YAG laser

Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Hiroyasu Yuasa, Shinji Yasaka, Masahiko Mitsuhashi, Yoshitada Shimizu, Seishiro Ohya, Keisuke Saito, Takayuki Watanabe, Shoji Okamoto, Hiroshi Funakubo

研究成果: Contribution to journalReview article査読

抄録

The fourth harmonic of Q-switched YAG was used to deposit yttria-stabilized zirconia (YSZ) film on Si(100) substrate. A secondary function generator was employed to modulate Q-switch while the primary generator was synchronized with flash lamps to decrease repetition rate of laser beam. At rate of 2 Hz, beam energy increased ∼ 50% per pulse. YSZ film was deposited on Si(100) using 3 mol% YSZ sintered pellet and ∼ 9 mol% single crystal YSZ as targets. In order to improve crystallinity of YSZ, two-step deposition was also carried out; deposition in oxygen insufficient atmosphere followed by oxygen sufficient atmosphere. The full width at half maxim (FWHM) of rocking curve showed ∼1.4° for the film produced by two-step deposition on Si substrate with thin SiO2 layer using single crystal YSZ as a target.

本文言語英語
ページ(範囲)581-584
ページ数4
ジャーナルShinku/Journal of the Vacuum Society of Japan
47
7
DOI
出版ステータス出版済み - 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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