Erratum: Border trap evaluation for SiO2/GeO2/Ge gate stacks using deep-level transient spectroscopy (J. Appl. Phys. (2018) 124 (205303) DOI: 10.1063/1.505529)

Wei Chen Wen, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

研究成果: Contribution to journalComment/debate査読

抄録

There is an inadvertent error in the published article.1 The effective masses of electron and hole in GeO2 are missing in the calculation of the density of border trap (Nbt). After including the effective masses, the correct Nbt values of p- and n-MOSCAPs should be 3 and 0.65 times the published values, respectively. As a result, the Nbt values of both p- and n-MOSCAPs are in the same range (∼1018 cm−3). To make corrections, Figs. 9, 11, 12, and 14 in the published article should be replaced with Figs. 1–4 in this erratum, respectively. In addition, an error was found in the caption of Fig. 13, where the word “valence” should be corrected as “conduction.” A misprinted operation symbol was also found in Eq. (A8). The correct equation is as follows: (Formula Presented). None of these corrections alter the conclusion of the published paper. (Figure Presented).

本文言語英語
論文番号169901
ジャーナルJournal of Applied Physics
127
16
DOI
出版ステータス出版済み - 4 30 2020

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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