抄録
There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2 × 1016 cm-3 and the resistivity around 24 ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.
本文言語 | 英語 |
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論文番号 | 369501 |
ジャーナル | Nanotechnology |
巻 | 32 |
号 | 36 |
DOI |
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出版ステータス | 出版済み - 9月 3 2021 |
!!!All Science Journal Classification (ASJC) codes
- バイオエンジニアリング
- 化学 (全般)
- 材料科学(全般)
- 材料力学
- 機械工学
- 電子工学および電気工学