Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)

M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

研究成果: Contribution to journalComment/debate査読

抄録

There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2 × 1016 cm-3 and the resistivity around 24 ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.

本文言語英語
論文番号369501
ジャーナルNanotechnology
32
36
DOI
出版ステータス出版済み - 9 3 2021

All Science Journal Classification (ASJC) codes

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

フィンガープリント

「Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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