Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)

M. Ajmal Khan; Juan Paolo Bermundo; Yasuaki Ishikawa; Hiroshi Ikenoue; Sachie Fujikawa; Eriko Matsuura; Yukio Kashima; Noritoshi Maeda; Masafumi Jo; Hideki Hirayama

doi:10.1088/1361-6528/ac0664

Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)

M. Ajmal Khan, Juan Paolo Bermundo, Yasuaki Ishikawa, Hiroshi Ikenoue, Sachie Fujikawa, Eriko Matsuura, Yukio Kashima, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama

エネルギー応用システム工学

研究成果: Contribution to journal › Comment/debate › 査読

抄録

There is a small error in the conclusion to this article. The penultimate sentence wrongly refers to n-AlGaN, when it should be p-AlGaN. The correct sentence should read: Also, the hole-trap level appeared to have been effectively suppressed by laser treatment, and reasonably improved hole concentration up to 2 × 1016 cm-3 and the resistivity around 24 ω.cm in the lightly polarized p-AlGaN HSL at RT was achieved.

本文言語	英語
論文番号	369501
ジャーナル	Nanotechnology
巻	32
号	36
DOI	https://doi.org/10.1088/1361-6528/ac0664
出版ステータス	出版済み - 9 3 2021

All Science Journal Classification (ASJC) codes

バイオエンジニアリング
化学 (全般)
材料科学（全般）
材料力学
機械工学
電子工学および電気工学

文献へのアクセス

10.1088/1361-6528/ac0664

他のファイルとリンク

フィンガープリント

「Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Khan, M. A., Bermundo, J. P., Ishikawa, Y., Ikenoue, H., Fujikawa, S., Matsuura, E., Kashima, Y., Maeda, N., Jo, M., & Hirayama, H. (2021). Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb). Nanotechnology, 32(36), [369501]. https://doi.org/10.1088/1361-6528/ac0664

Erratum : Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb). / Khan, M. Ajmal; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Fujikawa, Sachie; Matsuura, Eriko; Kashima, Yukio; Maeda, Noritoshi; Jo, Masafumi; Hirayama, Hideki.

In: Nanotechnology, Vol. 32, No. 36, 369501, 03.09.2021.

研究成果: Contribution to journal › Comment/debate › 査読

Khan, MA, Bermundo, JP, Ishikawa, Y, Ikenoue, H, Fujikawa, S, Matsuura, E, Kashima, Y, Maeda, N, Jo, M & Hirayama, H 2021, 'Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb)', Nanotechnology, vol. 32, no. 36, 369501. https://doi.org/10.1088/1361-6528/ac0664

Khan MA, Bermundo JP, Ishikawa Y, Ikenoue H, Fujikawa S, Matsuura E et al. Erratum: Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb). Nanotechnology. 2021 9 3;32(36). 369501. https://doi.org/10.1088/1361-6528/ac0664

Khan, M. Ajmal ; Bermundo, Juan Paolo ; Ishikawa, Yasuaki ; Ikenoue, Hiroshi ; Fujikawa, Sachie ; Matsuura, Eriko ; Kashima, Yukio ; Maeda, Noritoshi ; Jo, Masafumi ; Hirayama, Hideki. / Erratum : Impact of Mg-level on lattice-relaxation in p-AlGaN hole source layer (HSL) and attempting excimer laser annealing on p-AlGaN HSL of UVB emitters (Nanotechnology (2021) 32 (055702) DOI: 10.1088/1361-6528/abbddb). In: Nanotechnology. 2021 ; Vol. 32, No. 36.

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