Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs

Seiya Manabe, Yukinobu Watanabe, Wang Liao, Masanori Hashimoto, Shin Ichiro Abe

研究成果: ジャーナルへの寄稿記事

抄録

Negative and positive muon-induced single-event upset (SEU) rates were estimated for 65-nm bulk and ultrathin body and thin buried oxide silicon-on-insulator (UTBB-SOI) static random access memories (SRAMs). The SEU cross sections for muon incidence on the two SRAMs were experimentally characterized and compared. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon SEU rates at ground level was performed using the experimental results and the Monte Carlo simulation with the Particle and Heavy Ion Transport code System (PHITS). The estimated muon SEU rates were compared with the measured neutron SEU rates. The contribution of muons was found to be considerably smaller than that of neutrons. Attenuation effect of muons and neutrons in a five-story building was also investigated by particle transport simulation with PHITS. The muon SEU rate on the first floor was estimated to be at most 10% of the neutron SEU rate on the same floor.

元の言語英語
記事番号8712438
ページ(範囲)1398-1403
ページ数6
ジャーナルIEEE Transactions on Nuclear Science
66
発行部数7
DOI
出版物ステータス出版済み - 7 1 2019

Fingerprint

single event upsets
random access memory
Silicon oxides
silicon oxides
muons
Neutrons
insulators
Data storage equipment
Heavy ions
neutrons
heavy ions
cross sections
simulation
incidence
attenuation

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

これを引用

Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs. / Manabe, Seiya; Watanabe, Yukinobu; Liao, Wang; Hashimoto, Masanori; Abe, Shin Ichiro.

:: IEEE Transactions on Nuclear Science, 巻 66, 番号 7, 8712438, 01.07.2019, p. 1398-1403.

研究成果: ジャーナルへの寄稿記事

Manabe, Seiya ; Watanabe, Yukinobu ; Liao, Wang ; Hashimoto, Masanori ; Abe, Shin Ichiro. / Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs. :: IEEE Transactions on Nuclear Science. 2019 ; 巻 66, 番号 7. pp. 1398-1403.
@article{9e7ead3090a54abb95f50d6fb5d4bdd0,
title = "Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs",
abstract = "Negative and positive muon-induced single-event upset (SEU) rates were estimated for 65-nm bulk and ultrathin body and thin buried oxide silicon-on-insulator (UTBB-SOI) static random access memories (SRAMs). The SEU cross sections for muon incidence on the two SRAMs were experimentally characterized and compared. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon SEU rates at ground level was performed using the experimental results and the Monte Carlo simulation with the Particle and Heavy Ion Transport code System (PHITS). The estimated muon SEU rates were compared with the measured neutron SEU rates. The contribution of muons was found to be considerably smaller than that of neutrons. Attenuation effect of muons and neutrons in a five-story building was also investigated by particle transport simulation with PHITS. The muon SEU rate on the first floor was estimated to be at most 10{\%} of the neutron SEU rate on the same floor.",
author = "Seiya Manabe and Yukinobu Watanabe and Wang Liao and Masanori Hashimoto and Abe, {Shin Ichiro}",
year = "2019",
month = "7",
day = "1",
doi = "10.1109/TNS.2019.2916191",
language = "English",
volume = "66",
pages = "1398--1403",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Estimation of Muon-Induced SEU Rates for 65-nm Bulk and UTBB-SOI SRAMs

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Abe, Shin Ichiro

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Negative and positive muon-induced single-event upset (SEU) rates were estimated for 65-nm bulk and ultrathin body and thin buried oxide silicon-on-insulator (UTBB-SOI) static random access memories (SRAMs). The SEU cross sections for muon incidence on the two SRAMs were experimentally characterized and compared. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon SEU rates at ground level was performed using the experimental results and the Monte Carlo simulation with the Particle and Heavy Ion Transport code System (PHITS). The estimated muon SEU rates were compared with the measured neutron SEU rates. The contribution of muons was found to be considerably smaller than that of neutrons. Attenuation effect of muons and neutrons in a five-story building was also investigated by particle transport simulation with PHITS. The muon SEU rate on the first floor was estimated to be at most 10% of the neutron SEU rate on the same floor.

AB - Negative and positive muon-induced single-event upset (SEU) rates were estimated for 65-nm bulk and ultrathin body and thin buried oxide silicon-on-insulator (UTBB-SOI) static random access memories (SRAMs). The SEU cross sections for muon incidence on the two SRAMs were experimentally characterized and compared. The experimental results showed that the negative muon SEU cross sections for the bulk SRAM are significantly larger than those for the UTBB-SOI. Estimation of muon SEU rates at ground level was performed using the experimental results and the Monte Carlo simulation with the Particle and Heavy Ion Transport code System (PHITS). The estimated muon SEU rates were compared with the measured neutron SEU rates. The contribution of muons was found to be considerably smaller than that of neutrons. Attenuation effect of muons and neutrons in a five-story building was also investigated by particle transport simulation with PHITS. The muon SEU rate on the first floor was estimated to be at most 10% of the neutron SEU rate on the same floor.

UR - http://www.scopus.com/inward/record.url?scp=85069539849&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85069539849&partnerID=8YFLogxK

U2 - 10.1109/TNS.2019.2916191

DO - 10.1109/TNS.2019.2916191

M3 - Article

AN - SCOPUS:85069539849

VL - 66

SP - 1398

EP - 1403

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 7

M1 - 8712438

ER -