Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

Dong Wang, Masaharu Ninomiya, Masahiko Nakamae, Hiroshi Nakashima

研究成果: 会議への寄与タイプ論文

抄録

Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

元の言語英語
ページ2148-2150
ページ数3
出版物ステータス出版済み - 12 1 2004
イベント2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 - Beijing, 中国
継続期間: 10 18 200410 21 2004

その他

その他2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004
中国
Beijing
期間10/18/0410/21/04

Fingerprint

Interface states
Capacitance
Metals
Deep level transient spectroscopy
Fabrication
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Wang, D., Ninomiya, M., Nakamae, M., & Nakashima, H. (2004). Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. 2148-2150. 論文発表場所 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中国.

Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. / Wang, Dong; Ninomiya, Masaharu; Nakamae, Masahiko; Nakashima, Hiroshi.

2004. 2148-2150 論文発表場所 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中国.

研究成果: 会議への寄与タイプ論文

Wang, D, Ninomiya, M, Nakamae, M & Nakashima, H 2004, 'Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method', 論文発表場所 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中国, 10/18/04 - 10/21/04 pp. 2148-2150.
Wang D, Ninomiya M, Nakamae M, Nakashima H. Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. 2004. 論文発表場所 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中国.
Wang, Dong ; Ninomiya, Masaharu ; Nakamae, Masahiko ; Nakashima, Hiroshi. / Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method. 論文発表場所 2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004, Beijing, 中国.3 p.
@conference{9094c84ac6114f1fb3678f62e99a7dcb,
title = "Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method",
abstract = "Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge{\%}) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.",
author = "Dong Wang and Masaharu Ninomiya and Masahiko Nakamae and Hiroshi Nakashima",
year = "2004",
month = "12",
day = "1",
language = "English",
pages = "2148--2150",
note = "2004 7th International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2004 ; Conference date: 18-10-2004 Through 21-10-2004",

}

TY - CONF

T1 - Evaluation of interface states and minority carrier generation lifetime for strained Si/SiGe wafers using transient capacitance method

AU - Wang, Dong

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Nakashima, Hiroshi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

AB - Interface states intensity (Nss) and minority carrier generation lifetime (τg) were evaluated for strained Si (St-Si)/SiGe wafers using deep level transient spectroscopy (DLTS) and Metal-Oxide-Semiconductor (MOS) transient capacitance (C-t) methods. The dependences of Nss and τ g on St-Si thickness (dsi) and Ge fraction (Ge%) were shown clearly. By the same gate film fabrication and electrical measurements for a bulk Si MOS, the values of Nss and τg of St-Si MOS are similar to those of bulk Si MOS, showing good wafer quality.

UR - http://www.scopus.com/inward/record.url?scp=21644471261&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21644471261&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:21644471261

SP - 2148

EP - 2150

ER -