Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam

K. Motohashi, T. Kubota, K. Nakamura, R. Hori, C. Gallrapp, Y. Unno, O. Jinnouchi, S. Altenheiner, Y. Arai, M. Hagihara, M. Backhaus, M. Bomben, D. Forshaw, M. George, K. Hanagaki, K. Hara, M. Hirose, Y. Ikegami, N. Ishijima, J. JentzschK. Kawagoe, N. Kimura, T. Kono, A. MacChiolo, R. Nishimura, Susumu Oda, H. Otono, I. Rubinskiy, A. Rummler, R. Takashima, Y. Takubo, J. J. Teoh, S. Terada, K. Todome, J. Tojo, J. Usui, P. Weigell, J. Weingarten, D. Yamaguchi, K. Yorita

研究成果: ジャーナルへの寄稿学術誌査読

6 被引用数 (Scopus)

抄録

Various structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1×1016 1 MeV neq/cm2. Results of measurements with 120 GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented.

本文言語英語
ページ(範囲)125-129
ページ数5
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
765
DOI
出版ステータス出版済み - 11月 21 2014

!!!All Science Journal Classification (ASJC) codes

  • 核物理学および高エネルギー物理学
  • 器械工学

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