Pbi(DPM)2 and Pb(TMOD)2: dissolved in ethylcyclohexane were evaluated as precursors for future atomic layer deposition (ALD) of Pb(Zr,Ti)O3 films. PbO films were deposited by a liquid injection atomic layer deposition on Pt-covered Si substrates at different deposition temperature and precursor volume per cycle. Pb(DPM)2: and Pb(TMOD)2 started thermal decomposition at deposition temperature of around 270°C and 320°C, respectively. Against increasing Pb(DPM) 2 injection at 240°C, the deposition rate of PbO films saturated at around 1 A/cycle, but kept increasiiig at 300°C, which is. above the thermal decomposition temperature. The deposition rate of PbO films at 240°C dropped to a constant value with enough purge time after precursor injection and reactant supply. A saturated deposition rate of PbO films was also observed for Pb(TMC)D)2 below the thermal decomposition temperature. However, the saturation behavior observed for Pb(TMOD)2 was slower and the saturated growth rate was higher comparing to Pb(DPM)j. In addition, the film thickness of the PbO films had an apparent gradient over the substrates. These results indicate that Pb(DPM)2 shows more reactive and stable chemisorption comparing to Pb(TMOD)2 for the self-limiting growth rate.
|ホスト出版物のタイトル||Ferroelectric Thin Films XIII|
|出版ステータス||出版済み - 2005|
|イベント||2005 MRS Fall Meeting - Boston, MA, 米国|
継続期間: 11月 28 2005 → 12月 2 2005
|その他||2005 MRS Fall Meeting|
|Period||11/28/05 → 12/2/05|
!!!All Science Journal Classification (ASJC) codes