Evaluation of sic­mosfet by repetitive uis tests for solid state circuit breaker

Mitsuhiko Sagara, Keiji Wada, Shin­Ichi Nishizawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

2 被引用数 (Scopus)

抄録

This paper investigates a degradation of SiC power device for DC circuit breaker through repetitive unclamped inductive switching (UIS) tests. Being lower ON­resistance compared with Si devices, it has been considered an application for DC circuit breakers using SiC semiconductor. In order to use for the DC breaker, it is essential to evaluate the destructive endurance for UIS test. This paper evaluates a deterioration phenomenon by paying attention to the decrease of the gate voltage of the SiC­MOSFETs under the degradation at repetitive UIS test.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2019
編集者Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka
出版社Trans Tech Publications Ltd
ページ1010-1015
ページ数6
ISBN(印刷版)9783035715798
DOI
出版ステータス出版済み - 2020
イベント18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 - Kyoto, 日本
継続期間: 9 29 201910 4 2019

出版物シリーズ

名前Materials Science Forum
1004 MSF
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019
国/地域日本
CityKyoto
Period9/29/1910/4/19

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Evaluation of sic­mosfet by repetitive uis tests for solid state circuit breaker」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル