Radiation-tolerant n+-in-p silicon sensors were developed for use in very high radiation environments. Novel n+-in-p silicon strip and pixel sensors and test structures were fabricated, tested and evaluated, in order to understand the designs implemented. The resistance between the n+ implants (interstrip resistance), the electric potential of the p-stop, and the punch-through-protection (PTP) onset voltage were measured before and as a function of fluence after irradiation. The technology computer-aided design (TCAD) simulations were used to understand the radiation damage and fluence dependence of the structures. The decrease in the interstrip resistance is a consequence of increased leakage current. The decrease in the electric potential of the p-stop results from a build-up of positive charge in the silicon-silicon oxide interface. The decrease and subsequent increase in the PTP onset voltages results from the interface charge build-up and an increase in acceptor states.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|出版ステータス||出版済み - 2013|
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