Evaluation of zinc self-diffusion at the interface between homoepitaxial ZnO thin films and (0001) ZnO substrates

Ken Watanabe, Kenji Matsumoto, Yutaka Adachi, Takeshi Ohgaki, Tsubasa Nakagawa, Naoki Ohashi, Hajime Haneda, Isao Sakaguchi

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

Isotopic ZnO thin films were deposited on the c-plane of ZnO single crystals by pulsed laser deposition. The isotopic abundance of Zn in the films was determined with a secondary ion mass spectrometry before and after the films was diffusion annealed. The diffusion profiles across the film/substrate interface behaved smooth features. The zinc diffusion coefficient (D Zn) was obtained by analyzing the slope of the profile in the annealed sample. The temperature dependence of D Zn was determined to be D Zn(cm 2/s)=8.0×10 4exp(-417[kJ/mol])/ RT, where R and T are gas constant and temperature. The zinc ion diffusion coefficients were of the same order as that in a ZnO single crystal. A comparison of the experimental and theoretical values indicated that the zinc ions diffused in the thin film and the single crystal through a vacancy mechanism.

本文言語英語
ページ(範囲)1917-1920
ページ数4
ジャーナルSolid State Communications
152
20
DOI
出版ステータス出版済み - 10 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

フィンガープリント

「Evaluation of zinc self-diffusion at the interface between homoepitaxial ZnO thin films and (0001) ZnO substrates」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル