Isotopic ZnO thin films were deposited on the c-plane of ZnO single crystals by pulsed laser deposition. The isotopic abundance of Zn in the films was determined with a secondary ion mass spectrometry before and after the films was diffusion annealed. The diffusion profiles across the film/substrate interface behaved smooth features. The zinc diffusion coefficient (D Zn) was obtained by analyzing the slope of the profile in the annealed sample. The temperature dependence of D Zn was determined to be D Zn(cm 2/s)=8.0×10 4exp(-417[kJ/mol])/ RT, where R and T are gas constant and temperature. The zinc ion diffusion coefficients were of the same order as that in a ZnO single crystal. A comparison of the experimental and theoretical values indicated that the zinc ions diffused in the thin film and the single crystal through a vacancy mechanism.
All Science Journal Classification (ASJC) codes
- 化学 (全般)