Evolution of ferroelectric HfO2 in ultrathin region down to 3 nm

Xuan Tian, Shigehisa Shibayama, Tomonori Nishimura, Takeaki Yajima, Shinji Migita, Akira Toriumi

研究成果: Contribution to journalArticle査読

117 被引用数 (Scopus)

抄録

The ferroelectric properties of ultrathin Y-doped HfO2 films were investigated. Ferroelectricity was demonstrated experimentally in 3 nm-thick Y-doped HfO2 via direct detection of displacement currents during polarization switching. The dependence on the HfO2 thickness within the 30 to 3 nm range revealed that the ferroelectric properties decrease rapidly below a critical thickness. In the ultrathin HfO2 region, methods such as higher Y doping or metal capping annealing were required to further stabilize the ferroelectric phase. These methods could be used to enhance the switchable polarization (Psw) to 35 μC/cm2 in 5 nm- and 10 μC/cm2 in 3 nm-thick Y-doped HfO2. This paper indicates that HfO2 ferroelectricity is scalable even in the ultrathin region.

本文言語英語
論文番号102902
ジャーナルApplied Physics Letters
112
10
DOI
出版ステータス出版済み - 3 5 2018
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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