The development of a rf sputter deposition method to fabricate a 0.63 μm thick stack composed of several BaM layers was reported. The thickness of each layer was 0.09 μM to improve the c-axis orientation of the 0.63 μm thick film. Prior to the deposition of succeeding layer, each 0.09 μm layer ex-situ annealed at 800°C for 10 minutes. A squareness of 0.81 and 0.62 was showed by 0.63 μm thick BaM multilayered and single layered films, respectively.
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