Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations

Shinji Munetoh, Xiao Yan Ping, Tomohiko Ogata, Teruaki Motooka, Ryo Teranishi

    研究成果: ジャーナルへの寄稿学術誌査読

    3 被引用数 (Scopus)

    抄録

    Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.

    本文言語英語
    ページ(範囲)1925-1928
    ページ数4
    ジャーナルisij international
    50
    12
    DOI
    出版ステータス出版済み - 2010

    !!!All Science Journal Classification (ASJC) codes

    • 材料力学
    • 機械工学
    • 金属および合金
    • 材料化学

    フィンガープリント

    「Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル