Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations

Shinji Munetoh, Xiao Yan Ping, Tomohiko Ogata, Teruaki Motooka, Ryo Teranishi

研究成果: ジャーナルへの寄稿記事

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抄録

Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.

元の言語英語
ページ(範囲)1925-1928
ページ数4
ジャーナルisij international
50
発行部数12
DOI
出版物ステータス出版済み - 12 1 2010

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Excimer lasers
Crystallization
Amorphous silicon
Molecular dynamics
Melting
Thin films
Computer simulation
Annealing
Optical constants
Laser beam effects
Full width at half maximum
Crystal growth
Quenching
Laser pulses
Nucleation
Atoms
Liquids

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

これを引用

Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations. / Munetoh, Shinji; Ping, Xiao Yan; Ogata, Tomohiko; Motooka, Teruaki; Teranishi, Ryo.

:: isij international, 巻 50, 番号 12, 01.12.2010, p. 1925-1928.

研究成果: ジャーナルへの寄稿記事

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