抄録
Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 1925-1928 |
| ページ数 | 4 |
| ジャーナル | isij international |
| 巻 | 50 |
| 発行部数 | 12 |
| DOI | |
| 出版物ステータス | 出版済み - 12 1 2010 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry
これを引用
Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations. / Munetoh, Shinji; Ping, Xiao Yan; Ogata, Tomohiko; Motooka, Teruaki; Teranishi, Ryo.
：: isij international, 巻 50, 番号 12, 01.12.2010, p. 1925-1928.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Excimer laser crystallization processes of amorphous silicon thin films by using molecular-dynamics simulations
AU - Munetoh, Shinji
AU - Ping, Xiao Yan
AU - Ogata, Tomohiko
AU - Motooka, Teruaki
AU - Teranishi, Ryo
PY - 2010/12/1
Y1 - 2010/12/1
N2 - Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.
AB - Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.
UR - http://www.scopus.com/inward/record.url?scp=79952055119&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952055119&partnerID=8YFLogxK
U2 - 10.2355/isijinternational.50.1925
DO - 10.2355/isijinternational.50.1925
M3 - Article
AN - SCOPUS:79952055119
VL - 50
SP - 1925
EP - 1928
JO - ISIJ International
JF - ISIJ International
SN - 0915-1559
IS - 12
ER -