抄録
Crystallization processes of amorphous Si during the excimer laser annealing in the complete-melting and near-complete-melting conditions have been investigated by using molecular-dynamics simulations. The initial amorphous Si MD cell was prepared by quenching a liquid Si layer with 18 666 atoms. KrF excimer laser annealing processes of amorphous Si were calculated by taking account of the change in the optical constant upon melting during a Gaussian-shape laser pulse shot with full width at half maximum (FWHM) of 25 ns. The simulated results well reproduced the observed melting rate and the near-complete-melting and complete-melting conditions were obtained for 160 and 180 mJ/cm2 fluence, respectively. It was found that larger grains were obtained in the near-complete-melting condition. Our MD simulations also suggest that the nucleation occur from unmelted amorphous Si region during laser irradiation and crystal growth proceeds toward supercooled /-Si region in the near-complete-melting condition.
本文言語 | 英語 |
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ページ(範囲) | 1925-1928 |
ページ数 | 4 |
ジャーナル | isij international |
巻 | 50 |
号 | 12 |
DOI | |
出版ステータス | 出版済み - 2010 |
!!!All Science Journal Classification (ASJC) codes
- 材料力学
- 機械工学
- 金属および合金
- 材料化学