Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers

Atula S.D. Sandanayaka, Kou Yoshida, Toshinori Matsushima, Chihaya Adachi

研究成果: ジャーナルへの寄稿学術誌査読

22 被引用数 (Scopus)

抄録

The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.

本文言語英語
ページ(範囲)7631-7636
ページ数6
ジャーナルJournal of Physical Chemistry C
119
14
DOI
出版ステータス出版済み - 4月 9 2015

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • エネルギー(全般)
  • 物理化学および理論化学
  • 表面、皮膜および薄膜

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