TY - JOUR
T1 - Exciton quenching behavior of thermally activated delayed fluorescence molecules by charge carriers
AU - Sandanayaka, Atula S.D.
AU - Yoshida, Kou
AU - Matsushima, Toshinori
AU - Adachi, Chihaya
N1 - Publisher Copyright:
© 2015 American Chemical Society.
PY - 2015/4/9
Y1 - 2015/4/9
N2 - The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.
AB - The quenching of singlet excitons by injected charge carriers in molecules that display thermally activated delayed fluorescence (TADF) was investigated using time-resolved transient photoluminescence (PL) techniques. Injected electrons did not affect the excitons; however, injected holes caused significant quenching. Using a rate-equation analysis, the hole-induced exciton quenching rate was determined to be between 10-11 and 10-12 cm3 s-1. Interestingly, the TADF emission component was enhanced in the presence of injected holes, plausibly due to a reduction of the singlet-exciton energy level.
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U2 - 10.1021/acs.jpcc.5b01314
DO - 10.1021/acs.jpcc.5b01314
M3 - Article
AN - SCOPUS:84927632665
VL - 119
SP - 7631
EP - 7636
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
SN - 1932-7447
IS - 14
ER -