MOS electron tunneling emission cathodes have been fabricated with CoSi_2-SiO_2-Si structures, and the emission characteristics were evaluated. The 10 - 20 nm CoSi_2 layers were formed on 10 nm SiO_2 films by the molecular beam deposition (MBD). The electron emission occurred from the gate area by electron tunneling through the potential barrier in the MOS diode. The transfer ratio, i.e., the ratio of the emission current to the total current flowing through the MOS diode, was 1.4×10^<-4>. The emission was independent of pressure in the range of 1×10^<-4> - 6×10^<-6> Torr and stable over a long period of 100 min.
|ジャーナル||Research Reports on Information Science and Electrical Engineering of Kyushu University|
|出版ステータス||出版済み - 3 26 1999|