Fabrication and characterization of ferromagnetic tunnel junction with transition metal oxides

Fei Qin, Yukio Nozaki, Kimihide Matsuyama

研究成果: ジャーナルへの寄稿学術誌査読

抄録

A novel ferromagnetic tunnel junction with transition metal oxides has been fabricated with photo-lithographic technique. Well defined tunneling properties were observed in a novel barrier material of TiOx with the thickness down to 2 nm. Spin dependent transport properties have been confirmed for Fe3O4/ TiOx/M (M = Co, Co/NiFe, NiFe) tunnel junctions, where highest magneto-resistance (MR) change of 7% was observed for Co. Drastic improvement of field sensitivity was attained with the exchange coupled Co/ NiFe bi-layer.

本文言語英語
ページ(範囲)63-66
ページ数4
ジャーナルResearch Reports on Information Science and Electrical Engineering of Kyushu University
10
1
出版ステータス出版済み - 3月 2005

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • ハードウェアとアーキテクチャ
  • 工学(その他)

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