Fabrication and characterization of YBCO thin film on CeO 2/a-plane sapphire substrate

M. Shirakawa, M. Miura, T. Ohazama, Y. Shingai, A. Saito, M. Mukaida, S. Ohshima

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

We have examined the fabrication conditions of epitaxial CeO2 films on a-plane sapphire substrates, and also examined epitaxial growth of YBa2Cu3O7-δ(YBCO) films on CeO 2/a-plane sapphire substrate. The θ/2θ XRD analysis of these composite films revealed that grains of the CeO2 and YBCO on CeO2/a-plane sapphire substrate were perpendicular to the substrate. From the φ-scan XRD measurement, we found that the four 102 φ-scan peaks of the YBCO film were observed and the peak positions were shifted by 45° compared with those of the CeO2 films. From the peak shifts we could estimate that the angle between the [100] axis of the CeO2 and the [100] axis of the YBCO was 45°. From temperature dependence of resistivity of the YBCO/CeO2/a-plane sapphire substrates, we obtained a zero-resistance temperature (TC) of 88.6 K. We found that their crystallinity and critical temperature (TC) were quite similar to those of YBCO film on CeO2/r-plane sapphire substrate. At the moment, YBCO thin films on a-plane sapphire are inferior to YBCO thin film on r-plane sapphire in terms of surface resistance.

本文言語英語
ページ(範囲)1277-1280
ページ数4
ジャーナルPhysica C: Superconductivity and its applications
412-414
SPEC. ISS.
DOI
出版ステータス出版済み - 10 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • エネルギー工学および電力技術
  • 電子工学および電気工学

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