TY - JOUR
T1 - Fabrication and evaluation of a thermoelectric microdevice on a free-standing substrate
AU - Kurosaki, J.
AU - Yamamoto, A.
AU - Tanaka, S.
AU - Cannon, J.
AU - Miyazaki, K.
AU - Tsukamoto, H.
N1 - Funding Information:
This work is partially supported by MEXT (Grant No. 18686020). The authors wish to thank Professor Lenoir at Ecole des Mines de Nancy and Dr. Dauscher at CNRS for valuable comments; Dr. Jacquot at Fraunhofer Institut Physikalische Messtechnik in Germany and Dr. Takashiri at Komatsu for their experimental works; and Dr. Cannon at University of Surrey for correcting the English.
PY - 2009/7
Y1 - 2009/7
N2 - Using shadow masks prepared by standard microfabrication processes, we fabricated in-plane thermoelectric microdevices (4 mm × 4 mm) made of bismuth telluride thin films, and evaluated their performance. We used Bi 0.4Te 3.0Sb 1.6 as the p-type semiconductor and Bi 2.0Te 2.7Se 0.3 as the n-type semiconductor. We deposited p- and n-type thermoelectric thin films on a free-standing thin film of Si 3N 4 (4 mm × 4 mm × 4 μm) on a Si wafer, and measured the output voltages of the microdevices while heating at the bottom of the Si substrate. The maximum output voltage of the thermoelectric device was 48 mV at 373 K.
AB - Using shadow masks prepared by standard microfabrication processes, we fabricated in-plane thermoelectric microdevices (4 mm × 4 mm) made of bismuth telluride thin films, and evaluated their performance. We used Bi 0.4Te 3.0Sb 1.6 as the p-type semiconductor and Bi 2.0Te 2.7Se 0.3 as the n-type semiconductor. We deposited p- and n-type thermoelectric thin films on a free-standing thin film of Si 3N 4 (4 mm × 4 mm × 4 μm) on a Si wafer, and measured the output voltages of the microdevices while heating at the bottom of the Si substrate. The maximum output voltage of the thermoelectric device was 48 mV at 373 K.
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U2 - 10.1007/s11664-009-0819-y
DO - 10.1007/s11664-009-0819-y
M3 - Article
AN - SCOPUS:67650395335
SN - 0361-5235
VL - 38
SP - 1326
EP - 1330
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 7
ER -