Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs

Daisuke Nakamura, Yuki Ishida, Norihiro Tetsuyama, Mitsuhiro Higashihata, Tatsuo Okada

研究成果: ジャーナルへの寄稿記事

抄録

Vertically aligned ZnO nanowires were directly grown on a Mg-doped GaN substrate by nanoparticle-assisted pulsed laser deposition (NAPLD) without a catalyst. The photoluminescence of the ZnO nanowires at room temperature shows visible emission, which may be attributed to the point defects in the ZnO. A ZnO nanowire/GaN heterojunction LED was fabricated by preparing an insulating film of SOG (spin-on-glass) and electrodes. Electroluminescence at a wavelength of 500 to 900 nm was observed at room temperature under forward bias.

元の言語英語
ページ(範囲)715-720
ページ数6
ジャーナルJournal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi)
97
発行部数11
DOI
出版物ステータス出版済み - 12 1 2013

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Nanowires
Light emitting diodes
Heterojunctions
Fabrication
Electroluminescence
Point defects
Pulsed laser deposition
Photoluminescence
Nanoparticles
Glass
Wavelength
Temperature
Electrodes
Catalysts
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs. / Nakamura, Daisuke; Ishida, Yuki; Tetsuyama, Norihiro; Higashihata, Mitsuhiro; Okada, Tatsuo.

:: Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi), 巻 97, 番号 11, 01.12.2013, p. 715-720.

研究成果: ジャーナルへの寄稿記事

Nakamura, Daisuke ; Ishida, Yuki ; Tetsuyama, Norihiro ; Higashihata, Mitsuhiro ; Okada, Tatsuo. / Fabrication and luminescent properties of ZnO nanowire/GaN heterojunction LEDs. :: Journal of the Illuminating Engineering Institute of Japan (Shomei Gakkai Shi). 2013 ; 巻 97, 番号 11. pp. 715-720.
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