Fabrication of a high-Q factor ring resonator using LSCVD deposited Si3N4 film

Xiaoyang Cheng, Jianxun Hong, Andrew M. Spring, Shiyoshi Yokoyama

研究成果: ジャーナルへの寄稿学術誌査読

17 被引用数 (Scopus)

抄録

High-quality silicon nitride (Si3N4) films with a low stress and optical loss weredeposited at low temperature (150°C) using liquid source chemical vapor deposition(LSCVD). The refractive index of the Si3N4 film was optimized by changing the compositionratio and deposition temperature. An integrated photonic structure of micro-ring resonatorbased on the as-deposited Si3N4 layer has been demonstrated to exemplify its viability as aphotonic integration platform. Bragg gratings are fabricated at both ends of the buswaveguide to improve coupling efficiency and testing flexibility. A measured waveguide lossof 2.9 dB/cm and a high Q-factor of 5.2 × 104 are achieved. The LSCVD deposited Si3N4 istherefore a highly promising photonic integration platform for various integrated photonicapplications.

本文言語英語
ページ(範囲)2182-2187
ページ数6
ジャーナルOptical Materials Express
7
7
DOI
出版ステータス出版済み - 6月 2 2017

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料

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