Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate

Tsuyoshi Fujimura, Akihiro Ikeda, Shin Ichi Etoh, Reiji Hattori, Yukinori Kuroki, Masanori Hidaka, Suk Sang Chang

研究成果: 著書/レポートタイプへの貢献会議での発言

抜粋

In this paper we study about the fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate.

元の言語英語
ホスト出版物のタイトルDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
出版者Institute of Electrical and Electronics Engineers Inc.
ページ86-87
ページ数2
ISBN(電子版)4891140402, 9784891140403
DOI
出版物ステータス出版済み - 2003
イベントInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, 日本
継続期間: 10 29 200310 31 2003

その他

その他International Microprocesses and Nanotechnology Conference, MNC 2003
日本
Tokyo
期間10/29/0310/31/03

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

これを引用

Fujimura, T., Ikeda, A., Etoh, S. I., Hattori, R., Kuroki, Y., Hidaka, M., & Chang, S. S. (2003). Fabrication of absorber-embedded in membrane type deep X-ray exposure mask with wide exposure area made with Si substrate. : Digest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003 (pp. 86-87). [1268531] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2003.1268531