Fabrication of asymmetric Ge Schottky tunneling source n-channel field-effect transistor and its characterization of tunneling conduction

研究成果: ジャーナルへの寄稿記事

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抄録

An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel was to form a metal/Ge contact with a low electron barrier height (Φ BN ). Recently, we succeeded in the fabrication of a TiN/Ge contact with an extremely low Φ BN . In this study, a Ge-STS n-channel FET was fabricated, here PtGe/Ge and TiN/Ge contacts were used as the source and the drain. The device showed well-behaved transistor operation. From the current-voltage measurements in the wide temperature range of 160–300 K, the conduction mechanism from the source to the channel is confirmed to be field emission tunneling. This result will be the first step toward achieving a high-performance Ge-STS n-FET.

元の言語英語
ページ(範囲)283-287
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
70
DOI
出版物ステータス出版済み - 11 1 2017

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Field effect transistors
field effect transistors
conduction
Fabrication
space transportation system
fabrication
Voltage measurement
Electric current measurement
Field emission
electrical measurement
field emission
Transistors
transistors
Metals
Electrons
metals
electrons
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

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abstract = "An asymmetric Schottky tunneling source field-effect transistor (STS FET) is a prospective device structure to suppress the short channel effect and to reduce the off-state current. An obstacle to implement a STS FET with a high mobility Ge channel was to form a metal/Ge contact with a low electron barrier height (Φ BN ). Recently, we succeeded in the fabrication of a TiN/Ge contact with an extremely low Φ BN . In this study, a Ge-STS n-channel FET was fabricated, here PtGe/Ge and TiN/Ge contacts were used as the source and the drain. The device showed well-behaved transistor operation. From the current-voltage measurements in the wide temperature range of 160–300 K, the conduction mechanism from the source to the channel is confirmed to be field emission tunneling. This result will be the first step toward achieving a high-performance Ge-STS n-FET.",
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AU - Yamamoto, Keisuke

AU - Okamoto, Hayato

AU - Wang, Dong

AU - Nakashima, Hiroshi

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