Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K)

H. Tobita, K. Notoh, Kohei Higashikawa, Masayoshi Inoue, Takanobu Kiss, T. Kato, T. Hirayama, M. Yoshizumi, T. Izumi, Y. Shiohara

研究成果: ジャーナルへの寄稿記事

131 引用 (Scopus)

抄録

The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1 Ba 2 Cu 3 O 7-δ coated conductors has been studied with a view to improving the I c B-θ properties. BaMO x (M=metal) was introduced into Gd 1 Ba 2 Cu 3 O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors showed remarkably good I c B-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2 @77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.

元の言語英語
記事番号062002
ジャーナルSuperconductor Science and Technology
25
発行部数6
DOI
出版物ステータス出版済み - 6 1 2012

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Liquid nitrogen
liquid nitrogen
Film thickness
conductors
Fabrication
fabrication
film thickness
Pulsed laser deposition
Nanorods
Thick films
Metals
Temperature
nanorods
pulsed laser deposition
thick films
temperature
metals

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Condensed Matter Physics
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Fabrication of BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors with the high I c of 85A/cm-w under 3T at liquid nitrogen temperature (77K) . / Tobita, H.; Notoh, K.; Higashikawa, Kohei; Inoue, Masayoshi; Kiss, Takanobu; Kato, T.; Hirayama, T.; Yoshizumi, M.; Izumi, T.; Shiohara, Y.

:: Superconductor Science and Technology, 巻 25, 番号 6, 062002, 01.06.2012.

研究成果: ジャーナルへの寄稿記事

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abstract = "The introduction of effective artificial pinning centers into pulsed laser deposition derived Gd 1 Ba 2 Cu 3 O 7-δ coated conductors has been studied with a view to improving the I c B-θ properties. BaMO x (M=metal) was introduced into Gd 1 Ba 2 Cu 3 O 7-δ film, with the expectation of forming fine nanorods such as BaZrO 3 ones. BaHfO 3 doped Gd 1 Ba 2 Cu 3 O 7-δ coated conductors showed remarkably good I c B-θ characteristics, even at high temperature. A short sample with 1μm film thickness prepared using a reel-to-reel system showed a minimum I c value of 30A/cm-w@77K (A/cm-w@77K to be read as amps per centimeter width, at 77K) at 3T. The minimum J c value of 0.3MAcm 2 @77K at 3T was independent of the film thickness up to 2.9μm. The 2.9μm thick film showed a minimum I c value of 84.8A/cm-w@77K at 3T, corresponding to >200A/cm-w@65K at 5T.",
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AU - Notoh, K.

AU - Higashikawa, Kohei

AU - Inoue, Masayoshi

AU - Kiss, Takanobu

AU - Kato, T.

AU - Hirayama, T.

AU - Yoshizumi, M.

AU - Izumi, T.

AU - Shiohara, Y.

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