Fabrication of CMOS Invertors in Si Thin-Film-Transistors by Laser Doping Using a Chemical Solution Coating

Kaname Imokawa, Takayuki Kurashige, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

研究成果: ジャーナルへの寄稿記事

抜粋

We demonstrated that p- and n-type activation layers can be formed in Si films by laser doping with H3PO4 solution and Al2O3 sol coating. The phosphorus and aluminum concentrations at the laser doped region were found to be over 1019 cm-3 in Si films. In addition, generations of the activation carriers for n- and p-type layers were confirmed by Hall effects measurement. In this study, the characteristic of CMOS invertors fabricated by laser doping are presented.

元の言語英語
記事番号8918252
ページ(範囲)27-32
ページ数6
ジャーナルIEEE Journal of the Electron Devices Society
8
DOI
出版物ステータス出版済み - 1 1 2020

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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