Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes|
|出版ステータス||出版済み - 1998|
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