Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Tanemasa Asano; Daisuke Sasaguri

Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

日本エジプト科学技術連携センター

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

抄録

Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi₂ emitter tips operates by the application of voltages less than 50 V.

本文言語	英語
ページ（範囲）	7138-7142
ページ数	5
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
巻	37
号	12 B
出版ステータス	出版済み - 1998

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（その他）

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title = "Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation",

abstract = "Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.",

author = "Tanemasa Asano and Daisuke Sasaguri",

year = "1998",

language = "English",

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pages = "7138--7142",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

AU - Asano, Tanemasa

AU - Sasaguri, Daisuke

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N2 - Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

AB - Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12 B

ER -

Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

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!!!All Science Journal Classification (ASJC) codes

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