Fabrication of field emitter arrays using Si delamination by hydrogen ion implantation

Tanemasa Asano, Daisuke Sasaguri

研究成果: ジャーナルへの寄稿学術誌査読

抄録

Field electron emitter arrays (FEAs) have been fabricated using the void cut and delamination of hydrogen ion implanted Si. The process utilizes the mold made of single-crystal Si. The delaminated Si thin film forms the gate electrode which is self-aligned to the emitter. Investigation of process conditions shows that hydrogen-ion dose, bonding between the mold Si wafer and a supporting substrate, and wafer size are critical. An FEA with 700 WSi2 emitter tips operates by the application of voltages less than 50 V.

本文言語英語
ページ(範囲)7138-7142
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
37
12 B
出版ステータス出版済み - 1998

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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