Fabrication of gated cold cathode using standing thin film induced by ion-beam bombardment

Tomoya Yoshida, Akiyoshi Baba, Tanemasa Asano

研究成果: ジャーナルへの寄稿学術誌査読

8 被引用数 (Scopus)

抄録

We demonstrated high current field electron emission from a gated field electron emitter fabricated by the thin film standing technique which was induced by ion-beam bombardment and etch-back technique. The thin film material was tungsten disilicide. An emitter tip having a high aspect ratio was fabricated inside a gate aperture of 2 μm in diameter. The emission current of 10 μA was obtained from a single tip cathode at the gate voltage of 133.5 V. A multitip cathode composed of 1000 tips cathode showed a lower turn-on voltage (31 V) than that of the single tip (112 V), which indicated nonuniform distribution of the turn-on voltage.

本文言語英語
ページ(範囲)932-935
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
24
2
DOI
出版ステータス出版済み - 3月 1 2006

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 表面および界面
  • 物理学および天文学(その他)

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