Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al

Kana Hirayama, Ryuji Ueno, Yoshiaki Iwamura, Keisuke Yoshino, Dong Wang, Haigui Yang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

23 引用 (Scopus)

抄録

A novel method of electrical passivation of a Ge surface by an ultrathin SiO2/GeO2 bilayer is proposed as an effective method for fabricating metal-oxide-semiconductor (MOS) structures, which can be processed through the thermal etching of GeO2 by vacuum annealing and subsequent SiO2 deposition. We demonstrated the feasibility of this passivation technique by performing interface state density (Dit) measurements of MOS capacitors, which were fabricated using several surface preparations and subsequent gate insulating film deposition. A Dit of 4×1011 cm-2 eV-1 was obtained at around midgap. We also investigated the effect of postmetallization annealing after Al deposition (Al-PMA). Al-PMA was found to be very effective for decreasing Dit, which was 9:4×1010 cm-2 eV-1 at around midgap for a capacitor with PMA at 400 °C. The role of Al as a defect terminator was discussed.

元の言語英語
記事番号04DA10
ジャーナルJapanese Journal of Applied Physics
50
発行部数4 PART 2
DOI
出版物ステータス出版済み - 4 1 2011

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Passivation
metal oxide semiconductors
passivity
capacitors
Capacitors
Annealing
Fabrication
fabrication
annealing
Electron density measurement
Metals
Interface states
Etching
etching
Vacuum
Defects
vacuum
preparation
defects
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Fabrication of Ge metal-oxide-semiconductor capacitors with high-quality interface by ultrathin SiO2/GeO2 bilayer passivation and postmetallization annealing effect of al. / Hirayama, Kana; Ueno, Ryuji; Iwamura, Yoshiaki; Yoshino, Keisuke; Wang, Dong; Yang, Haigui; Nakashima, Hiroshi.

:: Japanese Journal of Applied Physics, 巻 50, 番号 4 PART 2, 04DA10, 01.04.2011.

研究成果: ジャーナルへの寄稿記事

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abstract = "A novel method of electrical passivation of a Ge surface by an ultrathin SiO2/GeO2 bilayer is proposed as an effective method for fabricating metal-oxide-semiconductor (MOS) structures, which can be processed through the thermal etching of GeO2 by vacuum annealing and subsequent SiO2 deposition. We demonstrated the feasibility of this passivation technique by performing interface state density (Dit) measurements of MOS capacitors, which were fabricated using several surface preparations and subsequent gate insulating film deposition. A Dit of 4×1011 cm-2 eV-1 was obtained at around midgap. We also investigated the effect of postmetallization annealing after Al deposition (Al-PMA). Al-PMA was found to be very effective for decreasing Dit, which was 9:4×1010 cm-2 eV-1 at around midgap for a capacitor with PMA at 400 °C. The role of Al as a defect terminator was discussed.",
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AU - Hirayama, Kana

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AU - Iwamura, Yoshiaki

AU - Yoshino, Keisuke

AU - Wang, Dong

AU - Yang, Haigui

AU - Nakashima, Hiroshi

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