Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering

Kana Hirayama, Keisuke Yoshino, Ryuji Ueno, Yoshiaki Iwamura, Haigui Yang, Dong Wang, Hiroshi Nakashima

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

抄録

Ge-MOS capacitors were fabricated by a novel method of ultra-thin SiO 2/GeO2 bi-layer passivation (BLP) for Ge surface combined with the subsequent SiO2-depositions using magnetron sputtering. For the Ge-MOS capacitors fabricated by BLP with O2, to decrease oxygen content in the subsequent SiO2 deposition is helpful for improving interface quality. By optimizing process parameters of the Ge surface thermal cleaning, the BLP, and the subsequent SiO2 deposition, interface states density of 4 × 1011 cm-2 eV-1 at around mid-gap was achieved, which is approximately three times smaller than that of non-passavited Ge-MOS capacitors. On the contrary, for the Ge-MOS capacitors fabricated by BLP without O2, interface quality could be improved by an increase in oxygen contents during the subsequent SiO2 deposition, but the interface quality was worse compared with BLP with O 2.

元の言語英語
ページ(範囲)122-127
ページ数6
ジャーナルSolid-State Electronics
60
発行部数1
DOI
出版物ステータス出版済み - 6 1 2011

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MOS capacitors
Passivation
Magnetron sputtering
passivity
capacitors
magnetron sputtering
Fabrication
fabrication
Oxygen
Interface states
oxygen
cleaning
Cleaning
germanium oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

これを引用

Fabrication of Ge-MOS capacitors with high quality interface by ultra-thin SiO2/GeO2 bi-layer passivation combined with the subsequent SiO2-depositions using magnetron sputtering. / Hirayama, Kana; Yoshino, Keisuke; Ueno, Ryuji; Iwamura, Yoshiaki; Yang, Haigui; Wang, Dong; Nakashima, Hiroshi.

:: Solid-State Electronics, 巻 60, 番号 1, 01.06.2011, p. 122-127.

研究成果: ジャーナルへの寄稿記事

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abstract = "Ge-MOS capacitors were fabricated by a novel method of ultra-thin SiO 2/GeO2 bi-layer passivation (BLP) for Ge surface combined with the subsequent SiO2-depositions using magnetron sputtering. For the Ge-MOS capacitors fabricated by BLP with O2, to decrease oxygen content in the subsequent SiO2 deposition is helpful for improving interface quality. By optimizing process parameters of the Ge surface thermal cleaning, the BLP, and the subsequent SiO2 deposition, interface states density of 4 × 1011 cm-2 eV-1 at around mid-gap was achieved, which is approximately three times smaller than that of non-passavited Ge-MOS capacitors. On the contrary, for the Ge-MOS capacitors fabricated by BLP without O2, interface quality could be improved by an increase in oxygen contents during the subsequent SiO2 deposition, but the interface quality was worse compared with BLP with O 2.",
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AU - Ueno, Ryuji

AU - Iwamura, Yoshiaki

AU - Yang, Haigui

AU - Wang, Dong

AU - Nakashima, Hiroshi

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