@conference{df2ee6e9c2084b518222e17ff14032a7,
title = "Fabrication of Ge-MOS Capacitors with High-Quality Interface by Ultra-Thin SiO2/GeO2 Bi-Layer Passivation",
author = "K. Hirayama and R. Ueno and Y. Iwamura and K. Yoshino and D. Wang and H. Yang and H. Nakashima",
year = "2010",
month = sep,
day = "23",
doi = "10.7567/ssdm.2010.p-1-11",
language = "English",
pages = "205--206",
note = "2010 International Conference on Solid State Devices and Materials (SSDM2010) ; Conference date: 21-09-2010 Through 24-09-2010",
}