Fabrication of Ge-on-Insulator by Epitaxial Growth and Ion-Implanted Exfoliation for Electronics and Optoelectronics Applications

Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Ge has been received much interest as a CMOS channel material and a near-infrared optical material due to its superior characteristics. Ge-on-Insulator (GOI) structure is necessary to suppress large leakage current originating from the narrow bandgap for application use. A method combined wafer bonding and layer splitting by hydrogen ion (H+) implantation, known as Smart-CutTM realized for Si-on-Insulator fabrication, has been tried to apply for fabricating GOI with large diameter, uniform thickness, and single crystal. In this study, we fabricated GOI by Smart-CutTM technique and demonstrated electronic and optoelectronic devices on the GOI. Besides, we combined a Ge epitaxial growth method with the Smart-CutTM technique to improve GOI quality.

本文言語英語
ホスト出版物のタイトル240th ECS Meeting - Semiconductor Process Integration 12
出版社IOP Publishing Ltd.
ページ157-166
ページ数10
4
ISBN(電子版)9781607685395
DOI
出版ステータス出版済み - 2021
イベント240th ECS Meeting - Orlando, 米国
継続期間: 10 10 202110 14 2021

出版物シリーズ

名前ECS Transactions
番号4
104
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

会議

会議240th ECS Meeting
国/地域米国
CityOrlando
Period10/10/2110/14/21

All Science Journal Classification (ASJC) codes

  • 工学(全般)

フィンガープリント

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引用スタイル