Fabrication of heterojunction diodes comprising nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon and p-type silicon

Abdelrahman Zkria, Hiroki Gima, Sausan Al-Riyami, Tsuyoshi Yoshitake

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited in nitrogen and hydrogen mixed gas atmospheres by coaxial arc plasma deposition (CAPD). Nitrogen-doped films with nitrogen contents of 3 and 8 at.% possessed n-type conduction. The electrical conductivity increased with increasing nitrogen content. Heterojunction diodes with p-type Si exhibited typical rectifying action. From the capacitance-voltage measurement, it was confirmed that the carrier density increases with the nitrogen content. copy; 2015 Materials Research Society.

本文言語英語
ホスト出版物のタイトルDiamond Electronics and Biotechnology - Fundamentals to Applications
編集者D. A. J. Moran, G. M. Swain, C.-L. Cheng, R. J. Nemanich
出版社Materials Research Society
ページ46-51
ページ数6
ISBN(電子版)9781510806153
DOI
出版ステータス出版済み - 2015
イベント2014 MRS Fall Meeting - Boston, 米国
継続期間: 11 30 201412 5 2014

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1734
ISSN(印刷版)0272-9172

その他

その他2014 MRS Fall Meeting
Country米国
CityBoston
Period11/30/1412/5/14

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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