TY - GEN
T1 - Fabrication of InP/SiC structure using surface activated direct bonding
AU - Fan, Y.
AU - Maekawa, T.
AU - Watanabe, K.
AU - Takigawa, R.
N1 - Funding Information:
A part of this work was financially supported by Kakenhi Grants-in-Aid (JP20H02207) from the Japan Society for the Promotion of Science.
Publisher Copyright:
© 2021 IEEE
PY - 2021/10/5
Y1 - 2021/10/5
N2 - Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.
AB - Bonding of Indium phosphide (InP)-based electronic device and Silicon Carbide (SiC) heat spreader is beneficial to thermal management. In this study, InP/SiC structure was demonstrated using surface activated direct bonding at room temperature. The bond quality was evaluated by dicing testing and tensile testing.
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U2 - 10.1109/LTB-3D53950.2021.9598366
DO - 10.1109/LTB-3D53950.2021.9598366
M3 - Conference contribution
AN - SCOPUS:85120408891
T3 - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
SP - 46
BT - 2021 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 7th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2021
Y2 - 5 October 2021 through 11 October 2021
ER -