Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes

M. Kawakita, K. Okabe, S. Yakata, Takashi Kimura

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and low-power consumption operations. From this view point, the devices, in general, consist of vertical stuck structure with the thin oxide layer. If one obtains the resistive switching operation in the laterally configured structure, we may obtain more flexible and functional device. It also should be noted that most of the metallic oxides showing the resistive switching include magnetic components1∼3). This implies that the resistance switching is related to the spin configuration in the metallic oxide. For these purpose, in the present study, we develop a novel method for the fabrication of the switching devices in lateral configuration and investigate the influence of the ferromagnetic electrode and spin orientation on the switching property.

元の言語英語
ホスト出版物のタイトル2015 IEEE International Magnetics Conference, INTERMAG 2015
出版者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781479973224
DOI
出版物ステータス出版済み - 1 1 2015
イベント2015 IEEE International Magnetics Conference, INTERMAG 2015 - Beijing, 中国
継続期間: 5 11 20155 15 2015

その他

その他2015 IEEE International Magnetics Conference, INTERMAG 2015
中国
Beijing
期間5/11/155/15/15

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Fabrication
Oxides
Electrodes
Nanoelectronics
Electric power utilization
Electric potential

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

これを引用

Kawakita, M., Okabe, K., Yakata, S., & Kimura, T. (2015). Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. : 2015 IEEE International Magnetics Conference, INTERMAG 2015 [7156918] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2015.7156918

Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. / Kawakita, M.; Okabe, K.; Yakata, S.; Kimura, Takashi.

2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7156918.

研究成果: 著書/レポートタイプへの貢献会議での発言

Kawakita, M, Okabe, K, Yakata, S & Kimura, T 2015, Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. : 2015 IEEE International Magnetics Conference, INTERMAG 2015., 7156918, Institute of Electrical and Electronics Engineers Inc., 2015 IEEE International Magnetics Conference, INTERMAG 2015, Beijing, 中国, 5/11/15. https://doi.org/10.1109/INTMAG.2015.7156918
Kawakita M, Okabe K, Yakata S, Kimura T. Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. : 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7156918 https://doi.org/10.1109/INTMAG.2015.7156918
Kawakita, M. ; Okabe, K. ; Yakata, S. ; Kimura, Takashi. / Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes. 2015 IEEE International Magnetics Conference, INTERMAG 2015. Institute of Electrical and Electronics Engineers Inc., 2015.
@inproceedings{1e336df691244555b4c0ba1d44f2f031,
title = "Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes",
abstract = "Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and low-power consumption operations. From this view point, the devices, in general, consist of vertical stuck structure with the thin oxide layer. If one obtains the resistive switching operation in the laterally configured structure, we may obtain more flexible and functional device. It also should be noted that most of the metallic oxides showing the resistive switching include magnetic components1∼3). This implies that the resistance switching is related to the spin configuration in the metallic oxide. For these purpose, in the present study, we develop a novel method for the fabrication of the switching devices in lateral configuration and investigate the influence of the ferromagnetic electrode and spin orientation on the switching property.",
author = "M. Kawakita and K. Okabe and S. Yakata and Takashi Kimura",
year = "2015",
month = "1",
day = "1",
doi = "10.1109/INTMAG.2015.7156918",
language = "English",
booktitle = "2015 IEEE International Magnetics Conference, INTERMAG 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Fabrication of laterally-configured resistive switching device with spin-polarized nano-gap electrodes

AU - Kawakita, M.

AU - Okabe, K.

AU - Yakata, S.

AU - Kimura, Takashi

PY - 2015/1/1

Y1 - 2015/1/1

N2 - Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and low-power consumption operations. From this view point, the devices, in general, consist of vertical stuck structure with the thin oxide layer. If one obtains the resistive switching operation in the laterally configured structure, we may obtain more flexible and functional device. It also should be noted that most of the metallic oxides showing the resistive switching include magnetic components1∼3). This implies that the resistance switching is related to the spin configuration in the metallic oxide. For these purpose, in the present study, we develop a novel method for the fabrication of the switching devices in lateral configuration and investigate the influence of the ferromagnetic electrode and spin orientation on the switching property.

AB - Resistive switching device consisting of metallic oxide layer sandwiched by the metallic electrodes has paid considerable attention to next-generation nano-electronic devices. Two major mechanisms; filament-type and interface-type, are known for the transition between the low-resistive and high-resistive states. In both mechanism, the low voltage operation is the common issue for the reliable and low-power consumption operations. From this view point, the devices, in general, consist of vertical stuck structure with the thin oxide layer. If one obtains the resistive switching operation in the laterally configured structure, we may obtain more flexible and functional device. It also should be noted that most of the metallic oxides showing the resistive switching include magnetic components1∼3). This implies that the resistance switching is related to the spin configuration in the metallic oxide. For these purpose, in the present study, we develop a novel method for the fabrication of the switching devices in lateral configuration and investigate the influence of the ferromagnetic electrode and spin orientation on the switching property.

UR - http://www.scopus.com/inward/record.url?scp=84942446925&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84942446925&partnerID=8YFLogxK

U2 - 10.1109/INTMAG.2015.7156918

DO - 10.1109/INTMAG.2015.7156918

M3 - Conference contribution

AN - SCOPUS:84942446925

BT - 2015 IEEE International Magnetics Conference, INTERMAG 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -