Mesa structural n-type nanocrystalline (NC) FeSi2/p-type Si heterojunctions were fabricated by a liftoff technique combined with photolithography in order to improve the diode performance, particularly to reduce the parasitic capacitance. Their current-voltage characteristics were experimentally studied in the dark and under illumination using a 1.31 μm laser at room temperature. Their junction capacitance density and leakage current density were evidently reduced as compared with those of the normal structural diodes. The mesa diode exhibits a good rectifying action with a rectification ratio of approximately three orders of magnitude at bias voltages of ±1 V. The photodetection was clearly observed owing to the suppression in the dark current. The estimated detectivity is 2.0 × 109 cm√Hz/W at zero bias, which is an order of magnitude larger than that of the normal structural diodes. This should be because the formation of interface states is reduced accompanied by the interface area reduction.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版物ステータス||出版済み - 12 2013|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics