Fabrication of metal-nitride/Si contacts with low electron barrier height

研究成果: ジャーナルへの寄稿記事

抄録

We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.

元の言語英語
ページ(範囲)53-59
ページ数7
ジャーナルECS Transactions
58
発行部数9
DOI
出版物ステータス出版済み - 1 1 2013

Fingerprint

Nitrides
Fabrication
Electrons
Metals
Sputtering
Nitrogen
Atoms

All Science Journal Classification (ASJC) codes

  • Engineering(all)

これを引用

Fabrication of metal-nitride/Si contacts with low electron barrier height. / Yamamoto, Keisuke; Asakawa, K.; Wang, Dong; Nakashima, Hiroshi.

:: ECS Transactions, 巻 58, 番号 9, 01.01.2013, p. 53-59.

研究成果: ジャーナルへの寄稿記事

@article{bdedb9f5090e4c088d0b6c5463fb97d6,
title = "Fabrication of metal-nitride/Si contacts with low electron barrier height",
abstract = "We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.",
author = "Keisuke Yamamoto and K. Asakawa and Dong Wang and Hiroshi Nakashima",
year = "2013",
month = "1",
day = "1",
doi = "10.1149/05809.0053ecst",
language = "English",
volume = "58",
pages = "53--59",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Fabrication of metal-nitride/Si contacts with low electron barrier height

AU - Yamamoto, Keisuke

AU - Asakawa, K.

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.

AB - We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.

UR - http://www.scopus.com/inward/record.url?scp=84904884998&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904884998&partnerID=8YFLogxK

U2 - 10.1149/05809.0053ecst

DO - 10.1149/05809.0053ecst

M3 - Article

AN - SCOPUS:84904884998

VL - 58

SP - 53

EP - 59

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 9

ER -