Fabrication of metal-nitride/Si contacts with low electron barrier height

K. Yamamoto, K. Asakawa, D. Wang, H. Nakashima

    研究成果: Contribution to journalArticle査読

    抄録

    We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.

    本文言語英語
    ページ(範囲)53-59
    ページ数7
    ジャーナルECS Transactions
    58
    9
    DOI
    出版ステータス出版済み - 2013

    All Science Journal Classification (ASJC) codes

    • 工学(全般)

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