抄録
We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 53-59 |
| ページ数 | 7 |
| ジャーナル | ECS Transactions |
| 巻 | 58 |
| 発行部数 | 9 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2013 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
これを引用
Fabrication of metal-nitride/Si contacts with low electron barrier height. / Yamamoto, Keisuke; Asakawa, K.; Wang, Dong; Nakashima, Hiroshi.
：: ECS Transactions, 巻 58, 番号 9, 01.01.2013, p. 53-59.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Fabrication of metal-nitride/Si contacts with low electron barrier height
AU - Yamamoto, Keisuke
AU - Asakawa, K.
AU - Wang, Dong
AU - Nakashima, Hiroshi
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.
AB - We have successfully fabricated a TiN/Si contact with low electron barrier height (ΦBN) in our previous study. In this study, we fabricated Ti, Zr, Hf, TiN, ZrN, and HfN/Si contacts using rf sputtering method and evaluated their electrical characteristics. The results of metal/Si contacts well-consisted with reported results. On the other hand, the ΦBNs of metal nitride/Si contacts were remarkably low compared with those of the metal/Si contacts, which deviate largely from the empirical relation of ΦBN versus metal work function. This is considered to be attributable to an interlayer with nitrogen atoms between the metal nitride and Si. The back-gate MOSFETs with TiN, ZrN, and HfN as source/drain were fabricated, showing the normal device operation. From the device characteristics, the off-state current and parasitic resistance were associated with ΦBN of metal nitride. We believe that these fundamental data are useful for applying metal nitride to metal/Si contacts.
UR - http://www.scopus.com/inward/record.url?scp=84904884998&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904884998&partnerID=8YFLogxK
U2 - 10.1149/05809.0053ecst
DO - 10.1149/05809.0053ecst
M3 - Article
AN - SCOPUS:84904884998
VL - 58
SP - 53
EP - 59
JO - ECS Transactions
JF - ECS Transactions
SN - 1938-5862
IS - 9
ER -