Fabrication of n-type nanocrystalline diamond/3C-SiC/p-Si(001) junctions

Masaki Goto, Akira Koga, Kazuhiro Yamada, Yoshimine Kato, Kungen Teii

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

3 被引用数 (Scopus)

抄録

Nanocrystalline diamond (NCD)/3C-SiC layered films are deposited on Si substrates by using a moderate-pressure microwave plasma apparatus. The epitaxial 3C-SiC thin layer is grown on p-type Si(001) above 1200°C in 2%CH4/98%H2 by plasma-assisted carbonization and the n-type NCD overlayer is subsequently grown at 830°C in 1%CH 4/30%N2/69%Ar by plasma-enhanced chemical vapor deposition (CVD). According to cross sectional TEM observations, the initial thickness of the 3C-SiC layer (∼20 nm) is reduced to 10 nm or less in the beginning of the NCD growth due most likely to etching. A rectifying current-voltage characteristic is obtained for an n-type NCD/epitaxial 3C-SiC/p-type Si(001) junction in a diode configuration.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials 2010
編集者Edouard V. Monakhov, Tamas Hornos, Bengt G. Svensson
出版社Trans Tech Publications Ltd
ページ524-527
ページ数4
ISBN(印刷版)9783037850794
DOI
出版ステータス出版済み - 2011

出版物シリーズ

名前Materials Science Forum
679-680
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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